2SB1150

The 2SB1150 is a darlington transistor built-in a zener diode at B-C and a dumper diode at E-C.It is suitable for use to operate from IC without predriver,such as hammer driver.

Features of the 2SB1150 are:(1)high DC current gain; (2)built-in a zener diode at B-C and a ducper diode at E-C ; (3)low collector saturation voltage; (4)high power dissipation:PT=1.3W(at Ta=25).

The absolute maximum ratings of the 2SB1150 can be summarized as:(1)storage temperature:-55~150; (2)junction temperature:150maximum; (3)total power dissipation(Ta=25):1.3W; (4)total power dissipation(Tc=25):15W; (5)VCBO collector to base voltage:-60±10V; (6)VCEO collector to emitter voltage:-60±10V; (7)VEBO emitter to base voltage:-8.0V; (8)IC(DC) collector current:±3.0A; (9)IC(pulse) collector current:±5.0A.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .