2SB1132 T100 Q

The 2SB1132 T100 Q is designed as one kind of medium power transistor (-32 V, -1 A) device that has some points of features:(1)Low VCE(sat): VCE(sat) = -0.2 V (typ.) (IC/IB = -500 mA / -50 mA);(2)complements the 2SD1664 / 2SD1858..

The absolute maximum ratings of the 2SB1132 T100 Q can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -32 V;(3)emitter-base voltage: -5 V;(4)collector current: -1 or -2 A;(5)collector power dissipation: 1 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of 2SB1132 T100 Q can be summarized as:(1)collector-base breakdown voltage: -40 V;(2)collector-emitter breakdown voltage: -32 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.5 uA;(5)emitter cutoff current: -0.5 uA;(6)collector-emitter saturation voltage: -0.2 to -0.5 V;(7)DC current transfer ratio: 82 to 390;(8)transition frequency: 150 MHz;(9)output capacitance: 20 to 30 pF. If you want to know more information such as the electrical characteristics about the 2SB1132-T100Q, please download the datasheet in www.seekic.com or www.chinaicmart.com.