2SB1143S

Series: -
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Frequency - Transition: 150MHz
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 4A
Power - Max: 1.5W
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Manufacturer: ON Semiconductor
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
Supplier Device Package: TO-126ML


Description

The 2SB1143S is designed as one kind of PNP / NPN epitaxial planar silicon transistor that can be used in 50 V / 4 A switching applications. Features of the 2SB1144S are:(1)adoption of FBET and MBIT processes;(2)high breakdown voltage;(3)low saturation voltage;(4)large current capacity and wide ASO.

The absolute maximum ratings of the 2SB1143S can be summarized as:(1)collector-to-base voltage: 60 V;(2)collector-to-emitter voltage: 50 V;(3)emitter-to-base voltage: 6 V;(4)collector current: 4 A;(5)collector current (pulse): 6 A;(6)collector dissipation: 1.5 W;(7)junction temperature: 150 ;(8)storage temperature: -55 to +150 .

And the electrical characteristics of the 2SB1143S can be summarized as:(1)collector cutoff current: 1 uA;(2)emitter cutoff current: 1 uA;(3)DC current gain: 100 to 560;(4)gain bandwidth product: 150 MHz;(5)output capacitance: 25 pF;(6)C-E saturation voltage: 190 to 500 mV;(7)B-E saturation voltage: 0.94 to 1.2 V. If you want to know more information such as the electrical characteristics about the 2SB1143S, please download the datasheet in www.seekic.com or www.chinaicmart.com .