2SC1623A-T1B L7

The 2SC1623A-T1B L7 is designed as one kind of NPN silicon epitaxial transistor that has some points of features:(1)High DC Current Gain: hFE=600 Max.(VCE=6.0V, IC=1.0mA);(2)High voltage: VCEO = 50V;(3)Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0.

The absolute maximum ratings of the 2SC1623A-T1B L7 can be summarized as:(1)Collector to Base Voltage: 60 V;(2)Collector to Emitter Voltage: 50 V;(3)Emitter to Base Voltage: 5 V;(4)Collector Current to Continuous: 100 mA;(5)Collector Power Dissipation: 200 mW;(6)Junction Temperature: 150 ;(7)Storage Temperature: -55 to 150 .

The electrical characteristics of this device can be summarized as:(1)Collector to base breakdown voltage: 60 V;(2)Collector to emitter breakdown voltage: 50 V;(3)Collector cut to off current: 0.1 uA;(4)Emitter cut to off current: 0.1 uA;(5)DC current gain: 200 to 600;(6)Collector to emitter saturation voltage: 0.15 to 0.30 V;(7)Base to emitter saturation voltage: 0.55 to 0.65 V;(8)gain bandwidth product: 250 MHz. Micro Commercial Components Corp. reserves the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. If you want to know more information about the 2SC1623A-T1B L7L6, please download the datasheet in www.seekic.com or www.chinaicmart.com .