2SA812A/B

The 2SA812A/B is designed as one kind of silicon epitaxial planar transistor device that has three points of features:(1)Commplementary to 2SC1623;(2)High DC current gain:hFE = 200 typ. (VCE = -6.0V,IC = -1.0mA);(3)High Voltage: VCEO = -50V. And this device can be used in audio frequency and general purpose amplifier applications.

The absolute maximum ratings of the 2SA812A/B can be summarized as:(1)Collector-Base Voltage: -60 V;(2)Collector-Emitter Voltage: -50 V;(3)Emitter-Base Voltage: -5 V;(4)Collector Current -Continuous: -100 mA;(5)Collector Dissipation: 200 mW;(6)Junction and Storage Temperature: -55 to 150 .

The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: -60 V;(2)Collector-emitter breakdown voltage: -50 V;(3)Emitter-base breakdown voltage: -5 V;(4)Collector cut-off current: -0.1 A;(5)Emitter cut-off current: -0.1 A;(6)DC current gain: 90 to 600;(7)Collector-emitter saturation voltage: -0.3 V;(8)Base-emitter voltage: -0.58 to -0.68 V;(9)Transition frequency: 180 MHz;(10)Collector output capacitance: 4.5 pF. If you want to know more information about the 2SA812A/B, please download the datasheet in www.seekic.com or www.chinaicmart.com .