2SA812A-M7

The 2SA812A-M7 is designed as one kind of PNP silicon epitaxial  transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is available. Also this device is designed for audio frequency power amplifier and switching application, especially in hybrid integrated circuits.

The absolute maximum ratings of the 2SA812A-M7 can be summarized as:(1)collector-base voltage: -60 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -6.0 V;(4)collector current: -150 mA;(5)collector power dissipation: 200 mW;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -60 V;(2)collector-emitter breakdown voltage: -50 V;(3)emitter-base breakdown voltage: -6 V;(4)collctor cutoff current: -0.1 uA;(5)emitter cutoff current: -0.1 uA;(6)collector-emitter saturation voltage: -0.18 to -0.30 V;(7)DC current transfer ratio: 90 to 600;(8)transition frequency: 180 MHz;(9)output capacitance: 4.5 pF. If you want to know more information such as the electrical characteristics about the 2SA812A-M7, please download the datasheet in www.seekic.com or www.chinaicmart.com.