2SA812

The 2SA812 is designed as one kind of PNP silicon epitaxial transistor device that has some points of features:(1)High Voltage: VCEO = -50 V;(2)Epitaxial planar type;(3)NPN complement: L2SC1623;(4)Pb-Free Package is available. Also this device is designed for audio frequency power amplifier and switching application, especially in hybrid integrated circuits.

The absolute maximum ratings of the 2SA812 can be summarized as:(1)collector-base voltage: -60 V;(2)collector-emitter voltage: -50 V;(3)emitter-base voltage: -6.0 V;(4)collector current: -150 mA;(5)collector power dissipation: 200 mW;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of 2SA812 can be summarized as:(1)collector-base breakdown voltage: -60 V;(2)collector-emitter breakdown voltage: -50 V;(3)emitter-base breakdown voltage: -6 V;(4)collctor cutoff current: -0.1 uA;(5)emitter cutoff current: -0.1 uA;(6)collector-emitter saturation voltage: -0.18 to -0.30 V;(7)DC current transfer ratio: 90 to 600;(8)transition frequency: 180 MHz;(9)output capacitance: 4.5 pF. If you want to know more information such as the electrical characteristics about the 2SA812, please download the datasheet in www.seekic.com or www.chinaicmart.com.