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2SB1067

Features: • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)• Low saturation voltage: VCE (sat) = −1.5 V (max)(IC = −1 A, IB = −1 mA)Specifications Characteristics Symbol Rating Unit Collector-base voltage BVCBO ...

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2SB1067: Features: • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)• Low saturation voltage: VCE (sat) = −1.5 V (max)(IC = −1 A, IB = −1 mA)Specifica...

2SB1067 Data Sheet

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Part Number:
2SB1067
Supply Ability:
5000

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Upload time: 2024/6/11

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Product Details

Description



Features:

• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max)(IC = −1 A, IB = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-base voltage
BVCBO
-80
V
Collector-emitter voltage
BVCES
-80
V
Emitter-base voltage
BVEBO
-8
V
Collector current
IC
-2
mA
Collector power dissipation Ta = 25
PC
1.5
mW
Tc = 25

10

Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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