2SB1062

DescriptionThe 2SB1062 is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has one point of feature:M type package suitable for automatic insertion, easier manual insertion and self-standing on PC board. The absolute maximum ratings of the 2SB1062 can be ...

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SeekIC No. : 004220762 Detail

2SB1062: DescriptionThe 2SB1062 is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has one point of feature:M type package suitable for automatic insertion, easier ...

floor Price/Ceiling Price

Part Number:
2SB1062
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Description

The 2SB1062 is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has one point of feature:M type package suitable for automatic insertion, easier manual insertion and self-standing on PC board.

The absolute maximum ratings of the 2SB1062 can be summarized as:(1)VCBO: -15 V;(2)VCEO: -10 V;(3)VEBO: -7 V;(4)Ic: -0.5 A;(5)Pc: 0.6 W;(6)Tj: 150 ;(7)Tstg: -55 to +150 . And the electrical characteristics of the 2SB1062 can be summarized as:(1)ICBO: -100 nA;(2)VCBO: -15 V;(3)VCEO: -10 V;(4)VEBO: -7 V;(5)hFE1: 100 to 350;(6)hFE2: 60;(7)VCE(sat): -0.16 to -0.2 V;(8)VBE(sat): -0.8 to -1.0 V;(9)fT= 130 MHz;(10)Cob: 22 pF. If you want to know more information such as the electrical characteristics about the 2SB1062, please download the datasheet in www.seekic.com or www.chinaicmart.com.




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