2SB1119

The 2SB1119 is designed as one kind of PNP / NPN epitaxial planar silicon transistor device that has some points of features:(1)adoption of FBET, MBIT processes;(2)low collector-to-emitter saturation voltage;(3)large current capacity and wide ASO;(4)fast switching speed;(5)very small size making it easy to provide high-density, small-sized hybrid IC's. Also this device can be used in LF amplifier, electronic governor applications.

The absolute maximum ratings of the 2SB1119 can be summarized as:(1)collector-base voltage: -25 V;(2)collector-emitter voltage: -25 V;(3)emitter-base voltage: -5 V;(4)collector current: -1 A;(5)collector power dissipation: 1.3 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -25 V;(2)collector-emitter breakdown voltage: -25 V;(3)emitter-base breakdown voltage: -5 V;(4)collctor cutoff current: -0.1 uA;(5)emitter cutoff current: -0.1 uA;(6)collector-emitter saturation voltage: -0.18 to -0.4 V;(7)DC current transfer ratio: 100 to 560;(8)transition frequency: 180 MHz;(9)output capacitance: 15 pF. If you want to know more information such as the electrical characteristics about the 2SB1119, please download the datasheet in www.seekic.com or www.chinaicmart.com.