2SB1108

The 2SB1108 is designed as one kind of PNP / NPN epitaxial planar silicon transistor. Features of this device are:(1)high DC current gain (hFE);(2)high speed switching;(3)"full pack" package for simplified mounting on a heat sink with one screw.

The absolute maximum ratings of the 2SB1108 can be summarized as:(1)collctor to base voltage: -120 V;(2)collector to emitter voltage: -120 V;(3)emitter to base voltage: -7.0 V;(4)collector current: -15 A;(5)collector dissipation: 2 W;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

And the electrical characteristics of the 2SB1108 can be summarized as:(1)collector to base breakdown voltage: -120 V;(2)collector to emitter breakdown voltage: -120 V;(3)emitter to base breakdown voltage: -7 V;(4)collector cutoff current: -100 or -10 uA;(5)base to emitter voltage: -2 V;(6)clooector to emitter saturation voltage: -2 V;(7)gain bandwidth product: 30 MHz. If you want to know more information such as the electrical characteristics about the 2SB1108, please download the datasheet in www.seekic.com or www.chinaicmart.com .