2SB1093

The 2SB1093 is designed as one kind of PNP silicon darlington transistor which includes a dumper diode at C-E. This device is suitable for general driving use, such as hammer, solenoid, lamp or motor.

Features of the 2SB1093 are:(1)high DC current gain;(2)high current capability, with ASO and low collector saturation voltage;(3)includes a dumper diode at C-E;(4)a complementary pair with NEC's 2SD1579.

The absolute maximum ratings of the 2SB1093 can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: 150 maximum;(3)total power dissipation: 1.0 W;(4)collector to base voltage: -80 V;(5)collector to emitter voltage: -80 V;(6)emitter to base voltage: -8.0 V;(7)collector current (DC): +/- 1.5 A;(8)clooector current (pulse): +/-3.0 A;(9)base current (DC): -0.15 A. If you want to know more information such as the electrical characteristics about the 2SB1093, please download the datasheet in www.seekic.com or www.chinaicmart.com .