2SB1068

The 2SB1068 is designed as one kind of PNP silicon transistor that can be used in driver and output stages of audio frequency amplifiers. Features of this device are:(1)low collector saturation voltage: VCE(sat): -0.25 V typ. (Ic= -1.0 A, IB= -10 mA);(2)high DC current gain: hFE: 350 typ. (VCE= -2.0 V, Ic= -100 mA);(3)high total power dissipation PT: 0.75 W (Ta=25 );(4)complementary to the NEC 2SD1513 NPN transistor.

The absolute maximum ratings of the 2SB1068 can be summarized as:(1)collector to base voltage: -20 V;(2)collector to emitter voltage: -16 V;(3)power dissipation (Tc=25 ): 45 W;(4)power dissipation (Ta=25 ): 0.75 W;(5)channel temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)emitter to base voltage: -6.0 V;(8)collector current: -2.0 A.

And the electrical characteristics of the 2SB1068 can be summarized as:(1)DC current gain: 135 to 650;(2)gain bandwidth product: 100 to 180 MHz;(3)output capacitance: 60 pF;(4)collector cutoff current: -100 nA;(5)emitter cutoff current: -100 nA;(6)base to emitter voltage: -550 to -650 mV;(7)base saturation voltage: -1.05 to -1.2 V. If you want to know more information such as the electrical characteristics about the 2SB1068, please download the datasheet in www.seekic.com or www.chinaicmart.com .