2SB1066M

The 2SB1066M is designed as one kind of PNP silicon transistor that can be used in driver and output stages of audio frequency amplifiers. Features of this device are:(1)low collector saturation voltage: VCE(sat): -0.5 V typ. (Ic= -2.0 A, IB= -200 mA);(2)complementary pair with 2SD1507M / 2SD1864.

The absolute maximum ratings of the 2SB1066M can be summarized as:(1)collector to base voltage: -60 V;(2)collector to emitter voltage: -50 V;(3)power dissipation (Tc=25 ): 1.0 W(4)channel temperature: 150 ;(5)storage temperature: -55 to +150 ;(6)emitter to base voltage: -8.0 V;(7)collector current: -3.0 A.

And the electrical characteristics of the 2SB1066M can be summarized as:(1)DC current gain: 2000;(2)output capacitance: 30 pF;(3)collector cutoff current: -10 uA;(4)emitter cutoff current: -4 mA;(5)base to emitter voltage: -2.0 V. If you want to know more information such as the electrical characteristics about the 2SB1066M, please download the datasheet in www.seekic.com or www.chinaicmart.com .