2SB1065-Q

The 2SB1065-Q is one member of the 2SB1065 family which is designed as the low frequency power amplifier epitaxial planar PNP silicon transistor that has four points of featurs:(1)low collector saturation voltage: VCE(sat) = -0.5 V (typ.) Ic/IB= 2A/-0.2A;(2)ASO is wide and highly resistant to breakdown;(3)complementary pair with 2SD1506;(4)easily mounted in radiator.

The absolute maximum ratings of the 2SB1065-Q can be summarized as:(1)VCBO: -60 V;(2)VCEO: -50 V;(3)VEBO: -5 V;(4)Ic: -3 A or -4.5 A;(5)Pc: 10 W (Tc=25) and 1.2 W (Ta=25);(6)Tj: 150 ;(7)Tstg: -55 to +150 . If you want to know more information such as the electrical characteristics about the 2SB1065-Q, please download the datasheet in www.seekic.com or www.chinaicmart.com.