2SB1018A

Features:

• High collector current: I_C = −7 A
• Low collector saturation voltage: V_CE (sat) = −0.5 V (max) (I_C = −4 A)
• Complementary to 2SD1411A






Specifications

PARAMETER		SYMBOL	VALUE	UNIT
Collector-base Voltage		VCBO	-100	V
Collector-emitter Voltage		VCEO	-80	V
Emitter-base Voltage		VEBO	-5	V
Collector Current		IC	-7	A
Base current		IB	-1	A
Collector power dissipation	Ta = 25	PC	2.0	W
	TC = 25		30
Junction Temperature		TJ	150
Storage Temperature		Tstg	-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).