2SC2712GT1G

Transistors Bipolar (BJT) 0.15A 60V NPN

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2SC2712GT1G Picture
SeekIC No. : 00211176 Detail

2SC2712GT1G: Transistors Bipolar (BJT) 0.15A 60V NPN

floor Price/Ceiling Price

Part Number:
2SC2712GT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.15 A
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V Configuration : Single
Maximum Operating Frequency : 80 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-59
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Collector- Emitter Voltage VCEO Max : 50 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : SC-59
Maximum DC Collector Current : 0.15 A
DC Collector/Base Gain hfe Min : 200 at 2 mA at 6 V
Maximum Operating Frequency : 80 MHz (Min)


Features:

• Lower VCE(sat)*
• Higher Gain (hfe)*
• Higher Breakdown Voltage Rating*
• Moisture Sensitivity Level: 1
• This is a Pb−Free Device



Pinout

  Connection Diagram


Specifications

Rating

Symbol

Value

Unit

Collector−Base Voltage

V(BR)CBO

60

Vdc

Collector−Emitter Voltage

V(BR)CEO

50

Vdc

Emitter−Base Voltage

V(BR)EBO

5.0

Vdc

Collector Current − Continuous

IC

150

mAdc

Collector Current − Peak

IC(P)

200

mAdc

Base Current

IB

30

mAdc




Description

The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications.




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