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2SC2500

Application• High DC current gain and excellent hFE linearity: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A): hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50mA)Specifications Characteristics Symbol Rating ...

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SeekIC No. : 004221921 Detail

2SC2500: Application• High DC current gain and excellent hFE linearity: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A): hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)• Low saturation voltage...

2SC2500 Data Sheet

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Part Number:
2SC2500
Supply Ability:
5000

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Product Details

Description



Application

• High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50mA)




Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 30 V
Collector-emitter voltage VCES 30 V
VCEO 10
Emitter-base voltage VEBO 6 V
Collector current

DC

 IC 2 A
Pulsed (Note 1) ICP 5
Base current IB 0.5 A
Collector power dissipation PC 900 mW
Junction temperature Tj 150
Storage temperature range Tstg −55 to 150

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




Description

The 2SC2500 is designed as one kind of silicon NPN epitaxial type (PCT process) that can be used in strobe flash applications and medium power amplifier applications. Features of this device are: (1)high DC current gain and excellent hFE linearity: hFE=140 to 600 (Vce=1 V,Ic=0.5 A) or hFE=70 (min.), 200 (typ.) (Vce=1 V,Ic=2 A); (2)low saturation voltage: Vce (sat)=0.5V (max.) (Ic=2 A, IB=50 mA).

The absolute maximum ratings of the 2SC2500 can be summarized as:(1)collector-base voltage:30 V;(2)collector-emitter voltage:30 V;(3)collector-emitter voltage:10 V;(4)emitter-base voltage:6 V;(5)collector current DC:2 A;(6)collector current pulsed:5 A;(7)base current:0.5 A;(8)collector power dissipation:900 mW;(9)junction temperature:150;(10)storage temperature:-55 to +150. If you want to know more information such as the electrical characteristics about the 2SC2500, please download the datasheet in www.seekic.com or www.chinaicmart.com.






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