Application`Specified 28V, 28MHz Characteristics `Output Power : Po = 150W(Min.) `PEP Power Gain : Gp = 12.2dB (Min.) `Collector Efficiency :C= 35% (Min.)`Intermodulation Distortion : IMD = 30dB (Max.) Specifications Characteristic Symbol Rating Unit Collector-base voltage ...
2SC2510A: Application`Specified 28V, 28MHz Characteristics `Output Power : Po = 150W(Min.) `PEP Power Gain : Gp = 12.2dB (Min.) `Collector Efficiency :C= 35% (Min.)`Intermodulation Distortion : IMD = 30dB (Ma...
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Characteristic |
Symbol |
Rating |
Unit | |
Collector-base voltage |
VCBO |
60 |
V | |
Collector-emitter voltage |
VCEX |
60 |
V | |
Collector-emitter voltage |
VCEO |
35 |
V | |
Emitter-base voltage |
VEBO |
4 |
V | |
Collector current |
IC |
20 |
A | |
Collector power dissipation |
PC |
250 |
W | |
Junction temperature |
Tj |
175 |
||
Storage temperature range |
Tstg |
-65~175 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).