2SC2688-AZ-L

The 2SC2688-AZ-L is designed as the NPN silicon transistor device that can be used in in Color TV chroma output circuits applications. And this device has two points of features:(1)High Electrostatic-Discharge-Resistance: ESDR: 1000V TYP. (E-B reverse bias, C=2300 pF); (2)Low Cre, High fT Cre 3.0 pF (VCB = 30 V) and fT 50MHz (VCE = 30 V, IE=-10 mA).

The absolute maximum ratings of the 2SC2688-AZ-L can be summarized as:(1)Collector to Base Voltage: 300 V;(2)Collector to Emitter Voltage: 300 V;(3)Emitter to Base Voltage: 5.0 V;(4)Collector Current: 0.2 A;(5)Total Power Dissipation: 1.25 W;(6)Junction Temperature: 150 ;(7)Storage Temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 100 nA;(2)Emitter Cutoff Current: 100 nA;(3)DC Current Gain: 40 to 250;(4)Collector Saturation Voltage: 1.5 V;(5)Gain Bandwidth Product: 50 to 80 MHz;(6)Feedback Capacitance: 3 pF. If you want to know more information such as the electrical characteristics about the 2SC2688-AZ-L, please download the datasheet in www.seekic.com or www.chinaicmart.com.