Features: * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)* Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA)Specifications PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 300 V Collector to Emitter Voltage VCE...
2SC2688: Features: * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)* Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA)Specifications PARAMETER S...
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PARAMETER | SYMBOL | RATINGS | UNIT | |
Collector to Base Voltage | VCBO | 300 | V | |
Collector to Emitter Voltage | VCEO | 300 | V | |
Emitter to Base Voltage | VEBO | 5.0 | V | |
Collector Current | IC | 200 | mA | |
Total Power Dissipation | Ta=25 | PD | 1.25 | W |
TC=25 | 10 | W | ||
Junction Temperature | TJ | 150 | ||
Storage Temperature | TSTG | -55 ~ +150 |