2SC2588

DescriptionThe 2SC2588 is designed as silicon NPN power transistors with typical application that suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications.2SC2588 has three features.The first one is that it would be with MT-200 packa...

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SeekIC No. : 004221959 Detail

2SC2588: DescriptionThe 2SC2588 is designed as silicon NPN power transistors with typical application that suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC co...

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Part Number:
2SC2588
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Description

The 2SC2588 is designed as silicon NPN power transistors with typical application that suited for high frequency power amplifiers, audio power amplifiers,switching regulators and DC-DC converters applications.
2SC2588 has three features.The first one is that it would be with MT-200 package.The second one is it wouldhave excellent safe operating area.The third one is that it would have fast switching speed.That are all the features.
Some absolute maximum ratings(Tc=25°C) have been concluded into several points as follow.The first one is about its collector-base voltage which would be 130V with condition of open emitter.The second one is about its collector-emitter voltage which would be 130V with condition of open base.The third one is about its emitter-base voltage which would be 5V with condition of open collector.The fourth one is about its collector current which would be 12A.The fifth one is about its collector power dissipation which would be120 W.The sixth one is  the junction temperature of 2SC2588 which would be which would be be within -55°C.The seventh one is about its storage temperature which would also be within -55 to +150°C.
Also some important electrical characteristics(Ta=25°C unless otherwise specified) about 2SC2588.The first one is about its collector-emitter breakdown voltage which would be 120(min) V with condition of Ic=1mA; Rbe=.Thesecond one is about its collector-base breakdown voltage which would be 120(min) V with condition of Ic=50A, Ie=0.The third one is about itsemitter-base breakdown voltage which would be 5(min) V with condition of Ie=50A, Ic=0.The fourth one is about itscollector-emitter saturation voltage which would be 1.8(max) V with condition of Ic=5 A,Ib=0.5 A.The fifth one is about itsbase-emitter voltage which would be 1.7(max) V with condition of Ic=5A, Vce=5V.The sixth one is about itscollector cut-off current which would be 50(max) A with condition of Vcb=120V,Ie=0.The seventh one is about itsemitter cut-off current which would be 50(max) A with condition of Veb=5V, Ic=0.The eighth one is about its transition frequency which would be 60MHz with condition of Ic=1A, Vcb=10V,f=1MHz.And so on.For more information please contact us.








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