DescriptionThe 2SC3789D is one of the 2SC3789 series.The 2SC3789D is a npn epitaxial planar type silicon transistor. Features of the 2SC3789D are:(1)high breakdown voltage(Vceo300V); (2)excellent high frequency characteristic(c re=1.8pF(typ)); (3)adoption of MBIT process; (4)no insulator required...
2SC3789D: DescriptionThe 2SC3789D is one of the 2SC3789 series.The 2SC3789D is a npn epitaxial planar type silicon transistor. Features of the 2SC3789D are:(1)high breakdown voltage(Vceo300V); (2)excellent h...
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The 2SC3789D is one of the 2SC3789 series.The 2SC3789D is a npn epitaxial planar type silicon transistor.
Features of the 2SC3789D are:(1)high breakdown voltage(Vceo300V); (2)excellent high frequency characteristic(c re=1.8pF(typ)); (3)adoption of MBIT process; (4)no insulator required for mounting,which contributes to reducing the cost and the number of manufacturing processes; (5)plastic-covered heat sink facilitating high-density mounting; (6)directly interchange able with TO-126 bacause the package is desighed based on the conventional package dimensions.
The absolute maximum ratings of the 2SC3789D can be summarized as:(1)collector to base voltage:(-)300V; (2)collector to emitter voltage:(-)300V; (3)emitter to base voltage:(-)5V; (4)collector current:(-)100mA; (5)peak colltector current:(-)200A; (6)collector dissipation:1.5W,7W(Tc=25); (7)junction temperature:150; (8)storage temperature:-55 to 150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.