2SC3320

Features:

·High voltage, high speed switching
· High reliability




Pinout






Specifications

PARAMETER	SYMBOL	RATINGS	UNIT
Collector Base Voltage	VCBO	500	V
Collector Emitter Voltage	VCEO	400	V
	VCEO(SUS)	400	V
Emitter Base Voltage	VEBO	7	V
Collector Current	IC	15	A
Base Current	IB	5	A
Power Dissipation	PD	80	W
Junction Temperature	TJ	150	···
Storage Temperature	Tstg	-55~150	···

Note 1. Absolute maximum ratings are those values beyond which the device could be
permanently damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0 ~+70 operating
temperature range and assured by design from -20 ~+85 .





Description

The 2SC3320 is designed as the silicon NPN power transistor device that can be used in wide range of applications such as (1)switching regulators; (2)ultrasonic generators; (3)high frequency inverters; (4)general purpose power amplifiers. And this device has three points of features: (1)With TO-3PN package; (2)High voltage ,high speed switching; (3)High reliability.

The absolute maximum ratings of the 2SC3320 can be summarized as:(1)Collector to Base Voltage: 500 V;(2)Collector to Emitter Voltage: 400 V;(3)Emitter to Base Voltage: 7.0 V;(4)Collector Current: 15 A;(5)Total Power Dissipation: 80 W;(6)Junction Temperature: 150 ;(7)Storage Temperature: -65 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 1.0 mA;(2)Emitter Cutoff Current: 1.0 mA;(3)DC Current Gain: 10;(4)Collector-emitter breakdown voltage: 400 V;(5)Collector-base breakdown voltage: 500 V;(5)Emitter-base breakdown voltage: 7.0 V;(6)Collector-emitter saturation voltage: 1.0 V;(7)Base-emitter saturation voltage: 1.5 V. If you want to know more information such as the electrical characteristics about the 2SC3320, please download the datasheet in www.seekic.com or www.chinaicmart.com.