2SD1111

The 2SD1111 is a npn epitaxial planar silicon darlington transistor.Features of the 2SD1111 are :(1)high dc current gain (5000 or greater); (2)large current capacity and wide ASO; (3)low saturation voltage(VCE(sat)=0.8V typ).

The absolute maximum ratings of the 2SD1111 can be summarized as:(1)collector to base voltage:80V; (2)collector to emitter voltage:50V; (3)emitter to base voltage:10V; (4)collector current:0.7A; (5)collector current(pulse):2A; (6)collector dissipation:600mW; (7)junction temperature:150; (8)storage temperature:-55~150.

The electrical characteristics at TA=25°C of the 2SD1111 can be summarized as:(1)collector cutoff current:0.1A; (2)emitter cutoff current:0.1A; (3)dc current gain:5000(hFE(1));4000(hFE(2)); (4)gain-band width product:200MHz; (5)output capacitance:10pF; (6)C-E saturation voltage:1.2V; (7)B-E saturation voltage:2.0V; (8)C-B breakdown voltage:80V; (9)C-E breakdown voltage:50V; (10)E-B breakdown voltage:10V.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .