Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 150...
2SC6118LS: Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecif...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 1500 | V | |
Collector-to-Emitter Voltage | VCEO | 800 | V | |
Emitter-to-Base Voltage | VEBO | 6 | V | |
Collector Current | IC | 8 | A | |
Collector Current (Pulse) | ICP | 20 | A | |
Collector Dissipation | PC | 2.0 | W | |
Tc=25°C | 35 | W | ||
Junction Temperature | Tj | 150 | ||
Storage Temperature | Tstg | -55 to +150 |
Absolute maximum ratings | |
---|---|
VCBO [V] | 1500 |
VCEO [V] | 800 |
IC [A] | 8 |
PC[W] | 35
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 5.3 |
hFE max | 7.5 |
VCE [V] | 5 |
IC [A] | 5 |
VCE (sat) max [V] | 2 |
IC [A] | 4.5 |
IB [A] | 0.9 |
tf max [µs] | 0.2 |