2SC681

The 2SC681 is designed as NPN silicon power transistors for use in B/W TV horizontal output applications.
2SC681 has two features. The first one is about its collector to emitter sustaining voltage which would be min 70V. The next one is about its low collector to emitter saturation voltage which would be max 2.0V at Ic=5.0A and Ib=0.6A. That are all the main fetaures.
Some absolute maximum ratings of 2SC681 have been concluded into several points as follow. The first one is about its collector to emitter voltage which would be 70V. The next one is about its collector to base voltage which would be 200V. The next one is about its emitter to base voltage which would be 5.0V. The next one is about its collector current which would be 6.0A fr continuous and would be 20A for peak. The next one is about its total power dissipation at Tc=25°C which would be 50W. The next one is about its operating and storage junction temperature range which would be from -65 to +150°C.
Also there are some electrical characteristics of 2SC681 (Tc=25°C unless otherwise noted) about it. The first one is about its collector to emitter sustaining voltage which would be min 70V with condition of Ic=50mA and Ib=0. The next one is about its collector cutoff current which would be max 1.0mA. The next one is about its emitter cutoff current which would be max 10mA with condition of Veb=5.0V and Ic=0. The next one is about its collector to emitter saturation voltage which would be 2.0V max with condition of Ic=5.0A and Ib=0.6A. The next one is about its base to emitter saturation voltage which would be max 1.5V with condition of Ic=5.0A and Ib=0.6A. The next one is about its fall time which would be max 0.5uS Ic=5.0A, Ib1=0.6A, Ib2=-1.0A and Vcc=25V. And so on. For more information please contact us.