Application·Designed for high voltage, low speed switching industrial use.Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 500 V VCEO Collector to emitter voltage 300 V VEBO Emitter to base voltage 10 V IC Collector Current-Continuous 5 A ...
2SD1162: Application·Designed for high voltage, low speed switching industrial use.Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 500 V VCEO Collector to emitter...
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SYMBOL | PARAMETER | RATING | UNIT |
VCBO | Collector to base voltage |
500 | V |
VCEO | Collector to emitter voltage |
300 | V |
VEBO | Emitter to base voltage |
10 | V |
IC | Collector Current-Continuous | 5 | A |
ICM | Collector Current-Peak | 10 | A |
IB | Base Current-Continuous | 0.5 | A |
PC | Collector power dissipation @ TC=25 @ Ta=25 |
40 1.5 |
W |
Tj | Junction temperature | 150 | |
Tstg | Storage temperaturerange | -65~150 |
The 2SD1162 features:
·High DC Current Gain- : hFE= 400(Min.)@IC= 2A
·High Switching Speed
·Low Collector Saturation Voltage