2SD1223

The 2SD1223 is a transistor,silicon npn epitaxial type(pct process)(darlington).

Features of the 2SD1223 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2SB908.

The absolute maximum ratings of the 2SD1223 can be summarized as:(1)collector-base voltage:100V; (2)collector-emitter voltage:80V; (3)emitter-base voltage:5V; (4)collector current:4A; (5)base current:0.4A; (6)collector power dissipation:Ta=25(1.0W);Tc=25(15W); (7)junction temperature:150; (8)storage temperature range:-55~150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.

The 2SD1223 is designed as the NPN epitaxial planar silicon transistor that has two points of features:(1)world standard miniature package; (2)low VCE(sat);(3)High dc current gain. And this device can be used in voltage regulators, relay drivers, lamp drivers, electrical equipment applications.

The absolute maximum ratings of the 2SD1223 can be summarized as:(1)collector-base voltage: 40 V;(2)collector-emitter voltage: 20 V;(3)emitter-base voltage: 6 V;(4)collector current: 2 or 3 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 2.0 W.

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 100 nA;(2)Emitter cutoff current: 100 nA;(3)DC current gain: 135 to 600;(4)Collector saturation voltage: 0.3 to 0.5 V;(5)Base saturation voltage: 0.95 to 1.2 V;(6)Base-emitter voltage: 650 to 750 mV;(7)Gain bandwidth product: 200 MHz;(8)Output capacitance: 28 pF. If you want to know more information such as the electrical characteristics about the 2SD1223, please download the datasheet in www.seekic.com or www.chinaicmart.com.