DescriptionThe 2SD1226M is a transistor,silicon npn epitaxial type. Features of the 2SD1226M are:(1)high power Pc=1W; (2)high breakdown voltage and large current capacity:Vceo=80V,Ic=700mA; (3)complementary pair with 2SB910M,2SB1238. The absolute maximum ratings of the 2SD1226M can be summarized...
2SD1226M: DescriptionThe 2SD1226M is a transistor,silicon npn epitaxial type. Features of the 2SD1226M are:(1)high power Pc=1W; (2)high breakdown voltage and large current capacity:Vceo=80V,Ic=700mA; (3)comp...
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The 2SD1226M is a transistor,silicon npn epitaxial type.
Features of the 2SD1226M are:(1)high power Pc=1W; (2)high breakdown voltage and large current capacity:Vceo=80V,Ic=700mA; (3)complementary pair with 2SB910M,2SB1238.
The absolute maximum ratings of the 2SD1226M can be summarized as:(1)Vcbo:80V; (2)Vceo:80V; (3)Vebo:5V; (4)Ic:700mA,1A(Pulse); (5)Pc:1W2; (6)Tj:150; (7)Tstg:-55~150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.