M28W800BB

Features: SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.6V for Input/Output VPP = 12V for fast Program (optional) ACCESS TIME: 70, 85, 90,100ns PROGRAMMING TIME 10s typical Double Word Programming Option COMMON FLASH INTERFACE 64 bit Security CodeMEMORY BLOCKS Parameter Blo...

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SeekIC No. : 004404338 Detail

M28W800BB: Features: SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.6V for Input/Output VPP = 12V for fast Program (optional) ACCESS TIME: 70, 85, 90,100ns PROGRAMMING TIME 10s typical D...

floor Price/Ceiling Price

Part Number:
M28W800BB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

SUPPLY VOLTAGE
VDD = 2.7V to 3.6V Core Power Supply
VDDQ= 1.65V to 3.6V for Input/Output
VPP = 12V for fast Program (optional)
ACCESS TIME: 70, 85, 90,100ns
PROGRAMMING TIME
10s typical
Double Word Programming Option
COMMON FLASH INTERFACE
64 bit Security Code
MEMORY BLOCKS
Parameter Blocks (Top or Bottom location)
Main Blocks
BLOCK PROTECTION on TWO PARAMETER BLOCKS
WPfor Block Protection
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per BLOCK
 ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M28W800BT: 8892h
Bottom Device Code, M28W800BB: 8893h



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient Operating Temperature (1)
40
85
°C
TBIAS
Temperature Under Bias
40
125
°C
TSTG
Storage Temperature
55
155
°C
VIO
Input or Output Voltage
0.6
VDDQ+0.6
V
VDD, VDDQ
Supply Voltage
0.6
4.1
V
VPP
Program Voltage
0.6
13
V
Note: 1. Depends on range.


Description

The M28W800BB is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture.  The M28W800B has an array of 23 blocks: 8 Parameter Blocks of 4 KWord and 15 Main Blocks of 32 KWord. M28W800BT has the Parameter Blocks at the top of the memory address space while the M28W800BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 5, Block Addresses. Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed.
Each block can be programmed and erased over 100,000 cycles.

Program and Erase commands M28W800BB are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations.

The end of a program or erase operation M28W800BB can be  detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

The memory is offered in TSOP48 (10 X 20mm), and TFBGA46 (6.39 x 6.37mm, 0.75mm pitch) packages and is supplied with all the bits erased (set to '1').




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