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M28W160CB

PinoutSpecifications Symbol Parameter Value Unit Min Max TA Ambient Operating Temperature (1) -40 85 °C TBIAS Temperature Under Bias -40 125 °C TSTG Storage Temperature -55 125 °C VIO(2,3) Input or Output Voltage -0.6 VDDQ+0.6 V VDD, VDDQ Supply Voltage ...

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SeekIC No. : 004404309 Detail

M28W160CB: PinoutSpecifications Symbol Parameter Value Unit Min Max TA Ambient Operating Temperature (1) -40 85 °C TBIAS Temperature Under Bias -40 125 °C TSTG Storage Temperature...

M28W160CB Data Sheet

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Part Number:
M28W160CB
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
Min Max
TA Ambient Operating Temperature (1) -40 85 °C
TBIAS Temperature Under Bias -40 125 °C
TSTG Storage Temperature -55 125 °C
VIO(2,3) Input or Output Voltage -0.6 VDDQ+0.6 V
VDD, VDDQ Supply Voltage -0.6 4.1 V
VPP Program Voltage -0.6 1.3 V
1. TA depends on the temperature range.
2. The minimum voltage may undershoot to −2V during transition and for less than 20ns during transitions.
3. The maximum voltage may overshoot to Vcc + 2V during transition and for less than 20ns during transitions


Description

The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture. The M28W160C has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160CT has the Parameter Blocks at the top of the memory address space while the M28W160CB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 5, Block Addresses




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