Features: ` Fast Access Time: 90 ns at VCC=5V` Single Supply Voltage: 4.5 V to 5.5 V for M28CxxB 2.7 V to 3.6 V for M28CxxB-W` Low Power Consumption` Fast BYTE and PAGE WRITE (up to 64 Bytes) 3ms at VCC=4.5 V 5ms at VCC=2.7 V` Enhanced Write Detection and Monitoring: Data Polling Toggle Bit ...
M28C16B: Features: ` Fast Access Time: 90 ns at VCC=5V` Single Supply Voltage: 4.5 V to 5.5 V for M28CxxB 2.7 V to 3.6 V for M28CxxB-W` Low Power Consumption` Fast BYTE and PAGE WRITE (up to 64 Bytes) 3ms...
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DescriptionThe M28C16-15WKA6 is one member of the M28C16 family which is designed as the 16 Kbit (...
DescriptionThe M28C16-90WK1TR is one member of the M28C16 family which is designed as the 16 Kbit ...
Symbol |
Parameter |
Value |
Unit |
TA | Ambient Operating Temperature |
40 to 125 |
|
TSTG | Storage Temperature |
65 to 150 |
|
VCC | Supply Voltage |
-0.3 to 6.5 |
V |
VIO | Input/Output Voltage |
-0.6 to VCC+0.6 |
V |
VI | Input Voltage |
0.3 to 6.5 |
V |
VESD | Electrostatic Discharge Voltage (Human Body model) (3) |
4000 |
V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the ST SURE Program and other relevant quality documents.
2. MIL-STD-883C, 3015.7 (100 pF, 1500 )
The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation, and require a single voltage supply.