Features: 2.7V to 3.6V LOW VOLTAGE in READ OPERATIONACCESS TIME:70ns at VCC=3.0V to 3.6V80ns at VCC=2.7V to 3.6VPIN COMPATIBLE with M27C1001LOW POWER CONSUMPTION:ActiveCurrent15mAat5MHzStandbyCurrent15µAPROGRAMMING TIME 100µs/byteHIGH RELIABILITY CMOS TECHNOLOGY2,000V ESD Protection200...
M27W101: Features: 2.7V to 3.6V LOW VOLTAGE in READ OPERATIONACCESS TIME:70ns at VCC=3.0V to 3.6V80ns at VCC=2.7V to 3.6VPIN COMPATIBLE with M27C1001LOW POWER CONSUMPTION:ActiveCurrent15mAat5MHzStandbyCurren...
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Symbol | Parameter | Value | Unit |
TA | AmbientOperatingTemperature(3) | 40 to 85 | °C |
TBIAS | TemperatureUnderBias | 50 to 125 | °C |
TSTG | StorageTemperature | 65 to 150 | °C |
VIO(2) | InputorOutputVoltage(exceptA9) | 2 to 7 | V |
VCC | SupplyVoltage | 2 to 7 | V |
VA9(2) | A9Voltage | 2 to 13.5 | V |
VPP | ProgramSupplyVoltage | 2 to 14 | V |
The M27W101 is a low voltage 1 Mbit EPROM of-fered in two range UV (ultravioleterase) and OTP (onetimeprogrammable). It is ideally suited for mi-croprocessor systems requiring large data or pro-gram storage and is organized as 131,072 by 8 bits.
The M27W101 operates in the read mode with a supply voltage as low as 2.7V at40 to 85°C tem-perature range.
The decrease in operating powe allows either a reduction of the size of the battery or an increase in the time between battery recharges.
The FDIP32W (window ceramic frit-seal package) has a transparent lid which allows the user toex-pose the chip to ultraviolet light to erase the bit pat-tern.A new pattern can then be written to the device by following the programming procedure.For application where the content is programmed only one time and erasure is not required,the M27W101 is offered in PDIP32,PLCC32and TSOP32 (8x20mm) packages.