Features: `FASTACCESSTIME: 90ns at 5V 120ns at 3V`SINGLE SUPPLY VOLTAGE: 5V± 10% for M28256 2.7V to 3.6V for M28256-xxW`LOWPOWER CONSUMPTION`FAST WRITE CYCLE: 64 Bytes Page Write Operation Byte or Page Write Cycle`ENHANCED END of WRITEDETECTION: Data Polling Toggle Bit`STATUS REGISTER`HIGH ...
M28256: Features: `FASTACCESSTIME: 90ns at 5V 120ns at 3V`SINGLE SUPPLY VOLTAGE: 5V± 10% for M28256 2.7V to 3.6V for M28256-xxW`LOWPOWER CONSUMPTION`FAST WRITE CYCLE: 64 Bytes Page Write Operation Byte...
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Symbol |
Parameter |
Value |
Unit |
TA | Ambient Operating Temperature (2) |
40 to 85
|
|
TSTG | Storage Temperature Range |
65 to 150 |
|
VCC | Supply Voltage |
0.3 to 6.5 |
V |
VIO | Input/Output Voltage | 0.3 to VCC +0.6 |
V |
VI | Input Voltage |
0.3 to 65 |
V |
VESD | Electrostatic Discharge Voltage (Human Body model) (3) |
4000 |
V |
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "AbsoluteMaximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Depends on range.
3. 100pF through 1500W; MIL-STD-883C, 3015.7
The M28256and M28256-Ware 32K x8 low power ParallelEEPROMfabricatedwith STMicroelectronics proprietary double polysilicon CMOS technology.