M28W640CT

Features: `SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.3V for Input/Output VPP = 12V for fast Program (optional)`ACCESS TIME 3.0V to 3.6V: 80ns 2.7V to 3.6V: 90ns`PROGRAMMING TIME: 10s typical Double Word Programming Option Quadruple Word Programming Option`COMMON FLASH IN...

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SeekIC No. : 004404328 Detail

M28W640CT: Features: `SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.3V for Input/Output VPP = 12V for fast Program (optional)`ACCESS TIME 3.0V to 3.6V: 80ns 2.7V to 3.6V: 90ns`PROGRAMMIN...

floor Price/Ceiling Price

Part Number:
M28W640CT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

`SUPPLY VOLTAGE
VDD = 2.7V to 3.6V Core Power Supply
VDDQ= 1.65V to 3.3V for Input/Output
VPP = 12V for fast Program (optional)
`ACCESS TIME
3.0V to 3.6V: 80ns
2.7V to 3.6V: 90ns
`PROGRAMMING TIME:
10s typical
Double Word Programming Option
Quadruple Word Programming Option
`COMMON FLASH INTERFACE
`MEMORY BLOCKS
Parameter Blocks (Top or Bottom location)
Main Blocks
`BLOCK LOCKING
All blocks locked at Power Up
Any combination of blocks can be locked
WP for Block Lock-Down
`SECURITY
128 bit user Programmable OTP cells
64 bit unique device identifier
One Parameter Block Permanently Lockable
`AUTOMATIC STAND-BY MODE
`PROGRAM and ERASE SUSPEND
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M28W640CT: 8848h
Bottom Device Code, M28W640CB: 8849h



Specifications

Symbol Parameter Value Unit
Min Max
TA Ambient Operating Temperature(1) 40 85
TBIAS Temperature Under Bias 40 125
TSTG Storage Temperature 55 155
VIO Input or Output Voltage 0.6 VDDQ+0.6 V
VDD, VDDQ Supply Voltage 0.6 4.1 V
VPP Program Voltage 0.6 13 V



Description

The M28W640CT is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture. The M28W640C has an array of 135 blocks: 8 Parameter Blocks of 4 KWord and 127 Main Blocks of 32 KWord. M28W640CT has the Parameter Blocks at the top of the memory address space while the M28W640CB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 5, Block Addresses.

The M28W640CT features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When VPP £ VPPLK all blocks are protected against program or erase. All blocks are locked at Power Up.

Each block M28W640CT can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The device includes a 192 bit Protection Register and a Security Block to increase the protection of a system design. The Protection Register is divided into a 64 bit segment and a 128 bit segment. The 64 bit segment contains a unique device number written by ST, while the second one is onetime-programmable by the user. The user programmable segment can be permanently protected. The Security Block, parameter block 0, can be permanently protected by the user. Figure 6, shows the Security Block Memory Map.

Program and Erase commands M28W640CT are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

The memory M28W640CT is offered in TSOP48 (12 X 20mm) and TFBGA48 (0.75mm pitch) packages and is supplied with all the bits erased (set to '1').




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