M28C64X

Features:

FASTACCESSTIME: 150ns
SINGLE5V± 10%SUPPLYVOLTAGE
LOW POWERCONSUMPTION
FASTWRITE CYCLE
32BytesPageWrite Operation
Byteor PageWrite Cycle: 5ms
ENHANCEDENDOF WRITEDETECTION
Ready/BusyOpenDrainOutput (forM28C64Cproductonly)
DataPolling
ToggleBit
PAGELOADTIMERSTATUSBIT
HIGHRELIABILITYSINGLEPOLYSILICON,
CMOSTECHNOLOGY
Endurance>100,000Erase/WriteCycles
DataRetention>40Years
JEDECAPPROVEDBYTEWIDEPINOUT


Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature	40 to 125	°C
TSTG	Storage Temperature Range	65 to 150	°C
VCC	Supply Voltage	0.3to 6.5	V
VIO	Input/Output Voltage	0.3 to VCC +0.6	V
VI	Input Voltage	0.3 to 6.5	V
VESD	Electrostatic Discharge Voltage (Human Body model)	2000	V

Description

The M28C64C is an 8 Kbit x8 low power Parallel EEPROMfabricated with STMicroelectronics pro- prietary single polysilicon CMOS technology.The device offersfast access timewith low powerdis- sipationandrequiresa 5Vpowersupply.

The circuit has been designed to offer a flexible microcontroller interface featuring both hardware andsoftwarehandshakingmodewith Ready/Busy Data Polling and Toggle Bit. The M28C64C sup- ports32 bytepagewriteoperation.