M28F256

The M28F256 is a kind of 256kbit-wide CMOS flash-memory. It offers the most cost-effective and reliable alternative for updatable non-volatile memory. Memory contents of the device can be erased and reprogrammed: 1)in a socket; 2)a PROM-programmer; 3)on-board during subassembly test; 4)in-system during final test; and 5)in-system after-sale.

There are some features of M28F256: (1)flash electrical chip-erase: 1 second typical; (2)quick-pulse programming: 100 s typical byte-program and 4 second chip-program; (3)100 erase/program cycles; (4)200 ns access time; (5)12.75V VPP; (6)command register architecture for microprocessor/microcontroller compatible write interface; (7)low power consumption: 100 A maximum standby current; (8)ETOX flash-memory technology: EEPROM-compatible process base and high-volume manufacturing experience.

The following is the absolute maximum ratings of M28F256: (1)case temperature bias: -55 to +125; (2)storage temperature: -65 to +150; (3)voltage on any pin with respect to ground: -2.0 to +7.0 V; (4)voltage on pin A9 with respect to ground: -2.0 to +13.5 V; (5)VPP supply voltage with respect to ground during erase/program: -2.0 to +14.0 V; (6)VCC supply voltage with respect to ground: -2.0 to +7.0 V; (7)output short circuit current: 100 mA.