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Vendor:STMicroelectronics Category:Discrete Semiconductor Products
IC TRANS RF PWR LDMOST PWRSO-10The PD57070-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source...
Vendor:Other Category:Other
The PD57070 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source...
Vendor:Other Category:Other
The PD57060 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 60 W with 14.3 dB gain @ 945 MHz / 28V; (4)new RF plas...
Vendor:Other Category:Other
The PD57045 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 45 W with 13 dB gain @ 945 MHz / 28 V; (4)new RF plast...
Vendor:Other Category:Other
The PD57030 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 30 W with 13 dB gain @ 945 MHz / 28 V; (4)new RF plast...
Vendor:Other Category:Other
The PD57018S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 28V in common source mod...
D/C:06+ Vendor:Other Category:Other
The PD57018 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 28V in common source mode...
Vendor:Other Category:Other
The PD57006 is designed as one kind of common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor that can be used in high gain, broad band commercial and industrial applications. This device oper...
Vendor:Other Category:Other
The PD57002S is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The PD57002 is designed f...
Vendor:STMicroelectronics Category:Discrete Semiconductor Products
TRANS RF N-CH FET LDMOST PWRSO10The PD57002-E is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 2 W with 15 dB gain @ 960 MHz / 28 V; (4)new RF plas...
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD57002 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The PD57002 is designed fo...
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:SANREX D/C:1THY&1DIO: 55A800V Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Power Thyristor/Diode Module PD55FG series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1600V are available. ...
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
The PD55035 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V; (4)new RF p...
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD55025S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source...
Mfg:sgs Pack:sgs D/C:dc02 Vendor:Other Category:Other
The PD55025 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source ...
Mfg:ST Pack:SOP D/C:01+ Vendor:Other Category:Other
The PD55015S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. PD55015S operates at 12V in common sou...
Mfg:500 Pack:ST D/C:03+ Vendor:Other Category:Other
The PD55015 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common source mode...
Vendor:Other Category:Other
The PD55008S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. PD55008S is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common sour...
Mfg:ST Pack:QFN D/C:07+ Vendor:Other Category:Other
The PD55008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source ...
Mfg:SGS D/C:05+ Vendor:Other Category:Other
The PD55008 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 12V in common source mode...
Mfg:STM D/C:2004 Vendor:Other Category:Other
The PD55003S is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source...
Mfg:ST Pack:QFN D/C:08+ Vendor:Other Category:Other
The PD55003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 12 V in common source m...
Vendor:Other Category:Other
The PD55003-01 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 12 V in common source ...
Mfg:N/A Pack:N/A D/C:09+ Vendor:Other Category:Other
The PD55003 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source ...
Vendor:Other Category:Other
The PD54008S isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source mode...
Mfg:ST Pack:QFN D/C:08+ Vendor:Other Category:Other
The PD54008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source m...
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD54008 isacommon sourceN-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source mode ...
Vendor:Other Category:Other
The PD54003S is a common source N-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source m...
Mfg:ST Pack:QFN D/C:07+ Vendor:Other Category:Other
The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source m...
Vendor:Other Category:Other
The PD54003-01 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source ...
Mfg:STM Pack:SOP-2P D/C:01+ Vendor:Other Category:Other
The PD54003 is a common source N-Channel, en-hancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. Itoperates at 7V in common source mo...
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:NIEC D/C:2DIO: 50A400V Vendor:Other Category:Other
Vendor:Other Category:Other
The PD50F2 is a FRD MODULE 50A/200V/trr:80nsec.
Features of the PD50F2 are:(1)Isolated Base ; (2)Dual Diode Cathode Common ; (3)Ultra Fast Recovery ; (4)High Surge Capability ; (5)UL Recognized, File No. E187184.
The a...
Vendor:Other Category:Other
PD505 is a type of stanley photo darlington transistor which has three unique features: The first one is high photo current. The second one is best suitable for photointerrupter. The third one is efficient when used in c...
Vendor:Other Category:Other
PD504 is a type of stanley photo darlington transistor which has three unique features: The first one is high photo current. The second one is best suitable for photointerrupter. The third one is efficient when used in c...
Vendor:Other Category:Other
PD502 is a type of stanley photo darlington transistor which has two unique features: The first one is midget resin package of 3.4 mm ida, permits use in limited space.The second one is high photo current.Besides, it als...
Vendor:Other Category:Other
The PD500-1xx is an InGaAs photodiode with a photosensitive region 500m in diameter. PD500-1xx is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.P...
Vendor:Other Category:Other
The PD500-0xx is an InGaAs photodiode with a photosensitive region 500m in diameter. It is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.Planar s...
Vendor:Other Category:Other
The PD500 is an InGaAs photodiode with a photosensitive region 500m in diameter. It is intended for use in high sensitivity instrumentation, laser back-facet monitoring and low bit rate communication systems.Planar semic...
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 1.711.99 GHz
The PD4W18-59LF is a monolithic four-way in-phase hybrid junction tuned for the 1.711.99 GHz band. It offers low loss, high isolation, good input/output matching and exce...
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 1.711.99 GHz
The PD4W18-12LF is a monolithic four-way in-phase hybrid junction tuned for the 1.711.99 GHz band. PD4W18-12LF offers low loss, high isolation, good input/output matching...
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 0.810.96 GHz
The PD4W09-59LF is a monolithic four-way in-phase hybrid junction tuned for the 0.810.96 GHz band. PD4W09-59LF offers low loss, high isolation, good input/output matching...
Vendor:Other Category:Other
Four-Way 0° Power Splitter Combiner 0.810.96 GHz
The PD4W09-12LF is a monolithic four-way in-phase hybrid junction tuned for the 0.810.96 GHz band. PD4W09-12LF offers low loss, high isolation, good input/output matching...
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Mfg:module Pack:SANREX D/C:05+ Vendor:Other Category:Other
Pack:IXYS D/C:2MOS: 30A500V Vendor:Other Category:Other
Mfg:SHARP Pack:. D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
The PD488588FF-C80-40 (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high ...
Vendor:Other Category:Other
The PD488588 is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latenc...
Mfg:ANAREN Pack:N/A D/C:N/A Vendor:Other Category:Other
Mfg:SHARP Pack:DIP-2 D/C:01+ Vendor:Other Category:Other
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
Mfg:SHARP D/C:3 Vendor:Other Category:Other
Vendor:Other Category:Other
PD4707 is designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink.
Vendor:Other Category:Other
The PD45128841-T is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of...
Vendor:Other Category:Other
The PD45128841-I is high-speed 134,217,728-bit synchronous dynamic random-access emories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of ...
Vendor:Other Category:Other
The PD45128441-T is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of...
Vendor:Other Category:Other
The PD45128441-I is high-speed 134,217,728-bit synchronous dynamic random-access emories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of ...
Vendor:Other Category:Other
The PD45128163-T is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs of...
Vendor:Other Category:Other
The PD45128163-SU is high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 2,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAMs of PD45128163-SU achieved high-speed data transfer us...
Vendor:Other Category:Other
The PD45128163-I is high-speed 134,217,728-bit synchronous dynamic random-access emories, organized as 8,388,608 × 4 × 4, 4,194,304 × 8 × 4, 2,097,152 × 16 × 4 (word × bit × bank), respectively. The synchronous DRAMs ach...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:OSRAM Opto Semiconductors Inc Category:Optoelectronics
DISPLAY PROGR 4CHAR 5X7 BRT GRNThe PD4437 is four digit display system modules. The characters are 0.20" by 0.14"(PD243X), 0.27" by 0.20" (PD353X), and 0.45" by 0.27"(PD443X) 5x7 dot matrix arrays constructed with the latest solid state technology in ...
Vendor:Other Category:Other
The PD4436 is four digit display system modules. The characters are 0.20" by 0.14"(PD243X), 0.27" by 0.20" (PD353X), and 0.45" by 0.27"(PD443X) 5x7 dot matrix arrays constructed with the latest solid state technology in ...
Vendor:OSRAM Opto Semiconductors Inc Category:Optoelectronics
DISPLAY PROGR 4CHAR 5X7 HE REDThe PD4435 is four digit display system modules. The characters are 0.20" by 0.14"(PD243X), 0.27" by 0.20" (PD353X), and 0.45" by 0.27"(PD443X) 5x7 dot matrix arrays constructed with the latest solid state technology in ...
Mfg:EVERLIGHT Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:. Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:EVERLIGHT Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:EVERLIGHT Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:EVERLIGHT Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:EVERLIGHT Pack:. D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
PD438B is a high speed and sensitive PIN photodiode in a cylindrical side view plastic package. The epoxy package itself is an IR filter , spectrallymatched to IR emitter.
Vendor:Other Category:Other
`The PD43256B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.`Battery backup is available. And A and B versions are wide voltage operations.`The PD43256B is packed in 28-pin plastic...
Vendor:Other Category:Other
The PD431000A is a high speed, low power, and 1,048,576 bits (131,072 words by 8 bits) CMOS static RAM.
The PD431000A has two chip enable pins (/CE1, CE2) to extend the capacity. And battery backup is available. In add...
Vendor:Other Category:Other
The PD4307 is designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink.
Pack:QFP Vendor:Other Category:Other
PD4306 is designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink.
Mfg:EVERLIGHT Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:EVERLIGHT Pack:. D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
PD4207 is designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink.
Mfg:SHARP D/C:05+ Vendor:Other Category:Other
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:SHARP Pack:. D/C:07+ Vendor:Other Category:Other
Mfg:SHARP Pack:. D/C:07+ Vendor:Other Category:Other
Vendor:Other Category:Other
PD4111 is designed for use in applications requiring rectification and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink.
Mfg:SHARP Pack:DIP-2 D/C:04+ Vendor:Other Category:Other
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