PD55035

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 7 A
Package / Case : PowerSO-10RF (Formed Lead)
Output Power : 35 W
Gain : 16.9 dB at 500 MHz


Description

The PD55035 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V; (4)new RF plastic package. Also this device can be used in high gain, broad band commercial and industrial applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package.

The absolute maximum ratings of the PD55035 can be summarized as:(1)Drain-Source Voltage: 40 V;(2)Gate-Source Voltage: ±20 V;(3)Drain Current: 7 A;(4)Power Dissipation (@ Tc = 70°C): 95 W;(5)Max. Operating Junction Temperature: 165 °C;(6)Storage Temperature: -65 to +150 °C;(7)Junction -Case Thermal Resistance: 1.0 °C/W.

The electrical characteristics of PD55035 can be summarized as:(1)V(BR)DSS: 65;(2)IDSS: 1 uA;(3)IGSS: 1 uA;(4)VGS(Q): 2.0 to 5.0 V;(5)VDS(ON): 0.8 to 0.95 V;(6)gFS: 2.5 mho;(7)CISS: 92 pF;(8)COSS: 73 pF;(9)CRSS: 6.1 pF. If you want to know more information about the PD55035, please download the datasheet in www.seekic.com or www.chinaicmart.com .