PD55003-01 Selling Leads, Price trend, PD55003-01 DataSheet download, circuit diagram from SeekIC.com

Features: • EXCELLENT THERMAL STABILITY• COMMON SOURCE CONFIGURATION• POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V• NEW LEADLESS PLASTIC PACKAGEPinoutSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Voltage 40 V VGS Gate-...

See larger image

SeekIC No. : 004457214 Detail

PD55003-01: Features: • EXCELLENT THERMAL STABILITY• COMMON SOURCE CONFIGURATION• POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V• NEW LEADLESS PLASTIC PACKAGEPinoutSpecifications ...

PD55003-01 Data Sheet

Get Latest Price

Part Number:: PD55003-01
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/10/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

PD55003 evaluate
Transistors RF MOSFET Power N-Ch 40 Volt 2.5 Amp
PD55003-E evaluate
US $4.66 - 5.27 / Piece

Transistors RF MOSFET Power RF POWER TRANS
PD55003L evaluate
Transistors RF MOSFET Power N-Ch 40 Volt 2.5 Amp

Product Details

Description

Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V
• NEW LEADLESS PLASTIC PACKAGE

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	40	V
V_GS	Gate-Source Voltage	±20	V
I_D	Drain Current	2.5	A
P_DISS	Power Dissipation (@ Tc = 70°C)	TBD	W
Tstg	Storage temperature	-65to150	°C
Tj	Max. operating junction temperature	150	°C

Description

The PD55003-01 is a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003-01 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.

PD55003-01's superior linearity performance makes it an ideal solution for car mobile radio.

Customers Who Bought This Item Also Bought

PD55015-E ST PWRSO10
US $$20.00 - 24.00 / Piece

Supply Ability:1Day

View details
THYRISTOR MODULE.GTR MODULE.IGBT MODULE.SCR MODULE. PD55F-120
US $$50.00 - 50.00 / Piece

Supply Ability:10Day

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

PD55003-01

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Memory Cards, Modules(216)

Switches(5620)

RF and RFID(1780)

Industrial Controls, Meters(3690)

Relays(6300)

Power Supplies - External/Internal (Off-Board)(631)