PD55003L

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Frequency : 1 GHz
Gate-Source Breakdown Voltage : 15 V
Drain-Source Breakdown Voltage : 40 V
Output Power : 3 W
Package / Case : PowerFLAT (5x5)
Continuous Drain Current : 2.5 A
Gain : 17 dB at 500 MHz


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V
·  NEW LEADLESS PLASTIC PACKAGE
·  ESD PROTECTION
·  SUPPLIED IN TAPE & REEL OF 3K UNITS

Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	2.5	A
PDISS	Power Dissipation (@ Tc = 70)	14	W
Tj	Max. Operating Junction Temperature	150
TSTG	Storage Temperature	-65 to +150

Description

The PD55003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD55003L boasts the excellent gain, linearity and reliability  of STH1LV  latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT(TM).

PD55003L's superior linearity performance makes it an ideal solution for car mobile radio.