PD57030

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Package / Case : PowerSO-10RF (Formed Lead)
Continuous Drain Current : 4 A
Output Power : 30 W
Gain : 14 dB at 945 MHz


Pinout




Description

The PD57030 is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 30 W with 13 dB gain @ 945 MHz / 28 V; (4)new RF plastic package. Also this device can be used in high gain, broad band commercial and industrial applications. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

The absolute maximum ratings of the PD57030 can be summarized as:(1)Drain-Source Voltage: 65 V;(2)Gate-Source Voltage: ±20 V;(3)Drain Current: 4 A;(4)Power Dissipation (@ Tc = 70°C): 52.8 W;(5)Max. Operating Junction Temperature: 165 °C;(6)Storage Temperature: -65 to +175 °C;(7)Junction -Case Thermal Resistance: 1.8 °C/W. If you want to know more information about the PD57030, please download the datasheet in www.seekic.com or www.chinaicmart.com .