PD57002

Transistors RF MOSFET Power N-Ch 65 Volt 0.25A

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PD57002 Picture
SeekIC No. : 00220829 Detail

PD57002: Transistors RF MOSFET Power N-Ch 65 Volt 0.25A

floor Price/Ceiling Price

Part Number:
PD57002
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1 GHz Gain : 15 dB at 960 MHz
Output Power : 2 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 0.25 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : PowerSO-10RF (Formed Lead)
Packaging : Tube    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Output Power : 2 W
Package / Case : PowerSO-10RF (Formed Lead)
Gain : 15 dB at 960 MHz
Continuous Drain Current : 0.25 A


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 2 W with 15 dB gain @ 960 MHz  /  28 V
·  NEW RF PLASTIC PACKAGE




Specifications

Symbol
Parameter
Value
Unit
V(BR)DSS
Drain-Source Voltage
65
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current
0.25
A
PDISS
Power Dissipation (@ Tc = 70)
4.75
W
Tj
Max. Operating Junction Temperature
165
TSTG
Storage Temperature
-65 to +150



Description

The PD57002 is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The PD57002 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity.

The PowerSO-10 plastic package of PD57002, designed to of-fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.




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