Configuration
: Single
Transistor Polarity
: N-Channel
Maximum Operating Temperature
: + 150 C
Drain-Source Breakdown Voltage
: 65 V
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 20 V
Frequency
: 1 GHz
Output Power
: 2 W
Package / Case
: PowerSO-10RF (Formed Lead)
Gain
: 15 dB at 960 MHz
Continuous Drain Current
: 0.25 A
Specifications
DescriptionThe PD57002-E is designed as one kind of RF power transistor that has four points of features:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 2 W with 15 dB gain @ 960 MHz / 28 V; (4)new RF plastic package. Also this device can be used in high gain, broad band commercial and industrial applications. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
The absolute maximum ratings of the PD57002-E can be summarized as:(1)Drain-Source Voltage: 65 V;(2)Gate-Source Voltage: ±20 V;(3)Drain Current: 0.25 A;(4)Power Dissipation (@ Tc = 70°C): 4.75 W;(5)Max. Operating Junction Temperature: 165 °C;(6)Storage Temperature: -65 to +150 °C;(7)Junction -Case Thermal Resistance: 20 °C/W.
The electrical characteristics of this device can be summarized as:(1)V(BR)DSS: 65;(2)IDSS: 1 uA;(3)IGSS: 1 uA;(4)VGS(Q): 2.0 to 5.0 V;(5)VDS(ON): 0.7 to 0.9 V;(6)gFS: - mho;(7)CISS: 7.1 pF;(8)COSS: 5.8 pF;(9)CRSS: 0.1 pF. If you want to know more information about the PD57002-E, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Parameters: | Technical/Catalog Information | PD57002-E |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 65V |
| Current Rating | 250mA |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PD57002 E
PD57002E
497 5304 5 ND
49753045ND
497-5304-5
|
PD57002-E Data Sheet
