PD57002S

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Output Power : 2 W
Package / Case : PowerSO-10RF (Straight Lead)
Gain : 15 dB at 960 MHz
Continuous Drain Current : 0.25 A


Features:

·  EXCELLENT THERMAL STABILITY
·  COMMON SOURCE CONFIGURATION
·  POUT = 2 W with 15 dB gain @ 960 MHz  /  28 V
·  NEW RF PLASTIC PACKAGE

Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	0.25	A
PDISS	Power Dissipation (@ Tc = 70)	4.75	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The PD57002S is a common source N-Channel, en-hancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The PD57002 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity.

The PowerSO-10 plastic package of  PD57002S, designed to of-fer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.