PD57006

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Package / Case : PowerSO-10RF (Formed Lead)
Continuous Drain Current : 1 A
Gain : 15 dB at 945 MHz
Output Power : 6 W


Description

The PD57006 is designed as one kind of common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor that can be used in high gain, broad band commercial and industrial applications. This device operates at 28 V in common source mode at frequencies of up to 1 GHz. Also it has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Features of the PD57006 are:(1)excellent thermal stability; (2)common source configuration; (3)Pout = 6 W with 15 dB gain @ 945 MHz / 28V; (4)new RF plastic package. The absolute maximum ratings of the PD57006 can be summarized as:(1)Drain-Source Voltage: 65 V;(2)Gate-Source Voltage: ±20 V;(3)Drain Current: 1 A;(4)Power Dissipation (@ Tc = 70°C): 20 W;(5)Max. Operating Junction Temperature: 165 °C;(6)Storage Temperature: -65 to +150 °C;(7)Junction -Case Thermal Resistance: 5 °C/W.

The electrical characteristics of PD57006 can be summarized as:(1)V(BR)DSS: 65;(2)IDSS: 1 uA;(3)IGSS: 1 uA;(4)VGS(Q): 2.0 to 5.0 V;(5)VDS(ON): 0.9 V;(6)gFS: 0.58 mho;(7)CISS: 27 pF;(8)COSS: 14 pF;(9)CRSS: 0.9 pF. If you want to know more information about PD57006, please download the datasheet in www.seekic.com or www.chinaicmart.com .