Transistors RF MOSFET Power POWER R.F.
PD57002S-E: Transistors RF MOSFET Power POWER R.F.
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 15 dB at 960 MHz |
Output Power : | 2 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 0.25 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | PowerSO-10RF (Straight Lead) |
Packaging : | Tube |
Technical/Catalog Information | PD57002S-E |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | N-Channel |
Voltage - Rated | 65V |
Current Rating | 250mA |
Package / Case | PowerSO-10 Exposed Bottom Pad |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PD57002S E PD57002SE 497 6718 5 ND 49767185ND 497-6718-5 |