PD57006-E

Transistors RF MOSFET Power RF POWER TRANS

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SeekIC No. : 00219519 Detail

PD57006-E: Transistors RF MOSFET Power RF POWER TRANS

floor Price/Ceiling Price

US $ 5.89~8.36 / Piece | Get Latest Price
Part Number:
PD57006-E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $8.36
  • $7.6
  • $6.46
  • $5.89
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/11/7

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1 GHz Gain : 15 dB at 945 MHz
Output Power : 6 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 1 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : PowerSO-10RF (Formed Lead)
Packaging : Tube    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Package / Case : PowerSO-10RF (Formed Lead)
Continuous Drain Current : 1 A
Gain : 15 dB at 945 MHz
Output Power : 6 W


Parameters:

Technical/Catalog InformationPD57006-E
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 65V
Current Rating1A
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PD57006 E
PD57006E
497 6719 5 ND
49767195ND
497-6719-5



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