PD57070

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Output Power : 70 W
Continuous Drain Current : 7 A
Package / Case : PowerSO-10RF (Formed Lead)
Gain : 14.7 dB at 945 MHz


Features:

· EXCELLENT THERMAL STABILITY
· COMMON SOURCE CONFIGURATION
· POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V
· NEW RF PLASTIC PACKAGE

Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	7	A
PDISS	Power Dissipation (@ Tc = 70)	95	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The PD57070 is a common  source  N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57070 boasts the excellent gain, linearity  and  reliability of ST's  latest  LDMOS technology mounted in the first true SMD plastic RF power  package, PowerSO-10RF. PD57070's superior linearity performance makes  it an ideal solution for base station applications.

The PowerSO-10 plastic package of PD57070 ,  designed  to offer high reliability, is the first  ST  JEDEC approved, high power SMD package. It has been specially  optimized  for RF needs and offers excellent RF performances and ease of assembly.